Two chips with CMOS heater chip, the temperature control function, and the
frequency temperature correction function in SMD-PKG(7×5×1.8mm) are
installed.Oscillation IC and Crystal is maintained to 90℃～100℃ with the
heater.
The oscillation frequency within the range of the temperature of the quartz vibrator
is maintained and the frequency stability level is maintained by always
making the
temperature of the oscillation substrate constant even if an environmental
temperature changes.
As for the quartz vibrator, the reliability of OCXO that the temperature change of
the repetition doesn't include the temperature change severely to reliability
becomes a good conditio．
There is not a possibility of the bit change of TCXO, and either it is steady
operation warrantable.
☆Frequency Stability：±0.1ppm（Type 14pinＤＩＰ）±0.2～5ppm(7×5×1.85mm)
☆PKG：SMD-Epoxy(7×5×1.85mm),Ceramic(Type H:7×5×1.8mm),14pin-Dip
☆Power Consumption：500mW/3.3V/20MHz
☆Heater Temperature：90～100℃
☆Frequency Range：10MHz～250MHz
☆Phase Noise：-162dBc/Hz(10KHz)/20MHz
☆Operation Voltage：3.3V±5% |
☆OC-SPXO:±1ppm/AS14985SOB
☆OC-VCXO:±1ppm/AS27000VOA
☆OC-VCXO:±1ppm/AS74175VOA
☆OC-VCXO:±1ppm/AS74250VOA
☆OC-VCXO:±1ppm/AS14835VOA
☆OC-SPXO:±0.1ppm/AS01900OHA
☆OC-SPXO:±0.1ppm/AS02000OHA |
The clock function and the low current consumption sleep mode clock of
high accuracy can be done
Oscillarion start time is 100msec, small size
and a wide range of the operation voltage are achieved.
It is
the best for standard clocks such as mobile PC, PDA, and cellular phones.
☆Output
frequency:32.768KHz
☆Frequency stability:+30 to -60ppm/-10 to +60℃,+300ppm/25℃
☆Oscillation start time:typ 100msec,max 500msec
☆Power consumption:typ 3uA,max 5uA
☆Operation voltage:1.5V to 5.5V
☆Package:SMD(6.5×4×2) |
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| ☆Product series:AS32768TDA(+30 to -60ppm/-10 to +60℃)AS32768TDB(+30 to -60ppm/-40 to +85℃) |
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☆32.768KHz is
obtained with the circuit of dividing frequency
by using the quartz vibrator of 16.777216MHz of the AT-cut crystal
☆Because the temperature characteristic is better than the cylinder crystal,
±10ppm can be achieved.
☆Current consumption has decreased from past 200uA to 35uA/1.8V because
it adopts the circuit
of an original, dynamic dividing frequency in
dramatic form.
☆Operating voltage:1.7V to 5.5V
☆Oscillation start time:1msec
☆Frequency stability:±10ppm/-40 to +85℃
☆Package:SMD(3.2×2.5×1mm)
☆Product series:AS32768AKA |
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☆A highly accurate clock is
composed only of silicon
☆The
vibration-proof the vibration, the oscillation start time, and the range of
the operation temperature improve
rapidly compared with the crystal
＊Outputfrequency:32.768KHz(32KHz to 250MHz)
＊Oscilation start time:50usec
＊Power consumption:5uA/32KHz,2mA/12MHz/3.3V
＊Operation temperature:-40 to +150℃
☆Frequency stability:±0.01 to 0.1%(CSP-PKG),±0.1 to ±2%(Mold-PKG)
☆PKG:Mold-SOT-25/2.9×2.8×1.2mm,CSP-2520/2.5×2×0.4mm
☆Product
series:CM32768BTA(1%) |
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☆27.000MHz-VCXO for digital image compression MPEG-2.000MHz-VCXO(7×5×1.7mm)
☆It adopts it for image compressions MPEG-2 such as digital TV, STB, DVD
☆Output frequency:27.000MHz
☆Frequency Pullability:min±110ppm,typ±150ppm
☆Frequency stability:±30ppm/-20 to +70℃
☆Operating voltage:3.3V±5%,5.0V±5%
☆Package:SMD(7.0×5.0×1.7mm)
☆Product
series:AS27000VCA,AS27000VDA: |
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VCXO for 74.175824MHz or 74.250MHz for digital Hi-Vision TV are mounted
in SMD PKG(7×5×1.7mm) Pullability guarantees APR≧±70ppm.
It is the best for small, efficient, and making of Hi-Vision equipment
high reliability
☆Output Frequency:74.175824MHz,74.250MHz
☆Frequency Pullability:min±70ppm
☆Frequency stability:±35ppm/-20 to +70℃
☆Operation voltage:3.3V±5%
☆Package:SMD(7.0×5.0×1.7mm)
☆Products series:AS74175VDA,AS74250VDA |
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The highest phase noise in SPXO-IC 20MHz-212MHz of the constant current drive method is achieved.
☆25MHz:-147dBc/10KHz,100MHz:-147dBc/10KHz,156MHz:-150dBc/10KHz
☆LVDS/25MHz:Operation V:1.8V to 3.5V/Power C:6mA/1.8V:AS25000SDLD
☆LVDS/62MHz:Operation V:2.3V to 3.5V/Power C:17mA/2.5:AS62500SDLB
☆LVDS/148MHz:Operation V:1.7V to 3.5V/Power C:21mA/1.8V:AS14850SDLC
☆LVDS/212MHz:Operation V:3.0V to 3.5V/Power C:53mA/3.3V:AS21250SDLB
☆LVPECL/100MHz:Operation V:3.3V±5%/Power C:35mA/3.3V:AS10000SDPA
☆LVPECL/156MHz:Operation V:3.3V±5%/Power C:50mA/3.3V:AS15625SDPC
☆LVPECL/212MHz:Operation V:3.3V±5%/Power C:72mA/3.3V:AS21250SDPB
☆Package:SMD(7.0×5.0×1.7mm) |
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■Technological
outline
|
■Custom integrated circuit
To optimize all analog circuit CMOS making, our company established the
process oftrimming the fuse with built-in chip by the laser blow.
This technology overcomes the difference of the characteristic of analog
CMOS-IC, and impossible high performance and a high yield have been achieved
in other methods.
Offering efficient, high-quality, analog CMOS-IC with which the customer
was able to be pleased
by the laser trim in large quantities and at a low price became possible.
It became easy to commercialize the multi function circuit that accumulated
making to low power,
an analog circuit, and the digital circuit not achieved easily by the bipolar
technology in making analog CMOS IC.
It became easy to commercialize the multi function
circuit
Making of the battery equipment and long-lived the energy saving of an electronic equipment are urgent
problems and domination and the utility of CMOS are remarkable further.
In this flow, our company pursues the mixedsignal technology that unites
the analog technology with the digital
technology aiming at CMOS One Chip System.
●Circuit that can be achieved by analog CMOS
☆Voltage reference circuit where temperature characteristic is
controlled by nA power consumption.
☆Control
of temperature characteristic (the first function characteristic, the second function characteristic,
and the third function characteristic)
☆Low current consumption(uA→nA)
☆Low voltage operation(operation voltage of 1V or less)
☆Low voltage and low current consumption operation amplifier
☆Sensor with built-in chip(voltage, current, temperature, light, and magnetism
and pressure)
☆Clock with built-in high stability chip(1% to 100ppm)
☆High frequency operation
☆High voltage and large current operation
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